2SB1181TLQ
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- Mfr.Part #
- 2SB1181TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A CPT3
- Stock
- 2,356
- In Stock ：
- 2,356
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Copper, Tin
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 17 Weeks
- Gain Bandwidth Product :
- 100MHz
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Terminal Finish :
- TIN COPPER
- Termination :
- SMD/SMT
- Power - Max :
- 10W
- Collector Base Voltage (VCBO) :
- -80V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- -400mV
- JESD-609 Code :
- e2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Form :
- Gull wing
- Continuous Collector Current :
- -1A
- Emitter Base Voltage (VEBO) :
- -5V
- JESD-30 Code :
- R-PSSO-G2
- Current Rating :
- -1A
- Collector Emitter Voltage (VCEO) :
- 400mV
- Number of Terminations :
- 2
- hFE Min :
- 120
- Pin Count :
- 3
- Max Collector Current :
- 1A
- Collector Emitter Breakdown Voltage :
- 80V
- Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 80V
- Mount :
- Surface Mount
- Max Power Dissipation :
- 10W
- Published :
- 2009
- Element Configuration :
- Single
- Base Part Number :
- 2SB1181
- Voltage - Rated DC :
- -80V
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Datasheets
- 2SB1181TLQ
PNP 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1181TLQ Overview
This device has a DC current gain of 120 @ 100mA 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -400mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -1A is necessary for high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.As a result, it can handle voltages as low as 80V volts.The maximum collector current is 1A volts.
2SB1181TLQ Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
2SB1181TLQ Applications
There are a lot of ROHM Semiconductor
2SB1181TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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