2SB1132T100Q
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- Mfr.Part #
- 2SB1132T100Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 32V 1A MPT3
- Stock
- 251,952
- In Stock ：
- 251,952
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- JESD-609 Code :
- e2
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -32V
- Base Part Number :
- 2SB1132
- Power Dissipation :
- 2W
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Breakdown Voltage :
- 32V
- Transistor Type :
- PNP
- Max Collector Current :
- 1A
- VCEsat-Max :
- 0.5 V
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 32V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Form :
- Flat
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 32V
- Gain Bandwidth Product :
- 150MHz
- Number of Terminations :
- 3
- Pin Count :
- 3
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Current Rating :
- -1A
- Mounting Type :
- Surface Mount
- Contact Plating :
- Copper, Tin
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 2W
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- -1A
- Transition Frequency :
- 150MHz
- Package / Case :
- TO-243AA
- Transistor Application :
- AMPLIFIER
- Frequency :
- 150MHz
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 40V
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Terminal Finish :
- TIN COPPER
- Operating Temperature :
- 150°C TJ
- Published :
- 2009
- hFE Min :
- 82
- Datasheets
- 2SB1132T100Q
2SB1132T100Q Documents
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1132T100Q Overview
This device has a DC current gain of 120 @ 100mA 3V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -1A is necessary for high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 32V volts.The maximum collector current is 1A volts.
2SB1132T100Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
2SB1132T100Q Applications
There are a lot of ROHM Semiconductor
2SB1132T100Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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