2SB1124T-TD-H

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 100mA 2V

JESD-609 Code :

e6

hFE Min :

100

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Frequency - Transition :

150MHz

Number of Pins :

3

Mounting Type :

Surface Mount

Transition Frequency :

150MHz

Number of Terminations :

3

Reach Compliance Code :

not_compliant

Published :

2012

Max Collector Current :

3A

Transistor Type :

PNP

Collector Base Voltage (VCBO) :

60V

Vce Saturation (Max) @ Ib, Ic :

700mV @ 100mA, 2A

Pin Count :

3

Collector Emitter Voltage (VCEO) :

50V

Collector Emitter Breakdown Voltage :

50V

Terminal Form :

Flat

Number of Elements :

1

Halogen Free :

Halogen Free

Max Power Dissipation :

500mW

Surface Mount :

yes

Terminal Position :

Single

Polarity/Channel Type :

PNP

Lead Free :

Lead Free

Case Connection :

COLLECTOR

Operating Temperature :

150°C TJ

Factory Lead Time :

4 Weeks

Emitter Base Voltage (VEBO) :

-6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

2SB1124

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

1μA ICBO

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-243AA

HTS Code :

8541.21.00.75

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Power - Max :

500mW

Configuration :

Single

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)