2SB1124S-TD-E
- Mfr.Part #
- 2SB1124S-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A PCP
- Stock
- 3,077
- In Stock :
- 3,077
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Published :
- 2012
- Pin Count :
- 3
- Pbfree Code :
- yes
- Terminal Form :
- Flat
- Width :
- 2.5mm
- Max Frequency :
- 150MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- JESD-609 Code :
- e6
- Transistor Type :
- PNP
- Height :
- 1.5mm
- Collector Emitter Saturation Voltage :
- -700mV
- Collector Base Voltage (VCBO) :
- -60V
- Max Power Dissipation :
- 500mW
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Emitter Base Voltage (VEBO) :
- -6V
- Package / Case :
- TO-243AA
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- Base Part Number :
- 2SB1124
- Number of Elements :
- 1
- Length :
- 4.5mm
- HTS Code :
- 8541.21.00.75
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Number of Terminations :
- 3
- Transition Frequency :
- 150MHz
- Factory Lead Time :
- 10 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 100mA, 2A
- hFE Min :
- 100
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Max Collector Current :
- 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 2V
- Frequency - Transition :
- 150MHz
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2SB1124S-TD-E
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PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1124S-TD-E Overview
In this device, the DC current gain is 140 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 100mA, 2A.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
2SB1124S-TD-E Features
the DC current gain for this device is 140 @ 100mA 2V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 150MHz
2SB1124S-TD-E Applications
There are a lot of ON Semiconductor
2SB1124S-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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