2SB1124S-TD-E

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Mfr.Part #
2SB1124S-TD-E
Manufacturer
onsemi
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 50V 3A PCP
Stock
3,077
In Stock :
3,077

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
PNP
Published :
2012
Pin Count :
3
Pbfree Code :
yes
Terminal Form :
Flat
Width :
2.5mm
Max Frequency :
150MHz
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Operating Temperature :
150°C TJ
Lead Free :
Lead Free
Element Configuration :
Single
JESD-609 Code :
e6
Transistor Type :
PNP
Height :
1.5mm
Collector Emitter Saturation Voltage :
-700mV
Collector Base Voltage (VCBO) :
-60V
Max Power Dissipation :
500mW
Mounting Type :
Surface Mount
Reach Compliance Code :
not_compliant
Emitter Base Voltage (VEBO) :
-6V
Package / Case :
TO-243AA
Transistor Application :
SWITCHING
Collector Emitter Voltage (VCEO) :
50V
Collector Emitter Breakdown Voltage :
50V
Base Part Number :
2SB1124
Number of Elements :
1
Length :
4.5mm
HTS Code :
8541.21.00.75
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Current - Collector Cutoff (Max) :
1μA ICBO
Number of Terminations :
3
Transition Frequency :
150MHz
Factory Lead Time :
10 Weeks
Vce Saturation (Max) @ Ib, Ic :
700mV @ 100mA, 2A
hFE Min :
100
Case Connection :
COLLECTOR
Number of Pins :
3
Max Collector Current :
3A
DC Current Gain (hFE) (Min) @ Ic, Vce :
140 @ 100mA 2V
Frequency - Transition :
150MHz
Mount :
Surface Mount
Transistor Element Material :
SILICON
Packaging :
Tape and Reel (TR)
Datasheets
2SB1124S-TD-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB1124S-TD-E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-243AA, Base Part Number:2SB1124, Number of Terminations:3, Number of Pins:3, 2SB1124S-TD-E pinout, 2SB1124S-TD-E datasheet PDF, 2SB1124S-TD-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB1124S-TD-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB1124S-TD-E


PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

2SB1124S-TD-E Overview


In this device, the DC current gain is 140 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 100mA, 2A.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

2SB1124S-TD-E Features


the DC current gain for this device is 140 @ 100mA 2V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 150MHz


2SB1124S-TD-E Applications


There are a lot of ON Semiconductor
2SB1124S-TD-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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