2SB1123T-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

-300mV

Surface Mount :

yes

Factory Lead Time :

5 Weeks

RoHS Status :

ROHS3 Compliant

Turn On Time-Max (ton) :

60ns

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin/Bismuth (Sn/Bi)

ECCN Code :

EAR99

Max Breakdown Voltage :

50V

Collector Base Voltage (VCBO) :

-60V

Turn Off Time-Max (toff) :

480ns

Gain Bandwidth Product :

150MHz

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

hFE Min :

100

Transistor Application :

SWITCHING

DC Current Gain-Min (hFE) :

200

Width :

2.5mm

Number of Elements :

1

Polarity :

PNP

Max Frequency :

150MHz

Radiation Hardening :

No

Max Power Dissipation :

500mW

Max Collector Current :

2A

Transition Frequency :

150MHz

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

HTS Code :

8541.21.00.75

Height :

1.5mm

Collector Emitter Voltage (VCEO) :

50V

Emitter Base Voltage (VEBO) :

-6V

Terminal Form :

Flat

Length :

4.5mm

Published :

2012

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e6

Number of Terminations :

3

Case Connection :

COLLECTOR

Max Operating Temperature :

150°C