2SB1123S-TD-E
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- Mfr.Part #
- 2SB1123S-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A PCP
- Stock
- 2,000
- In Stock ：
- 2,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pin Count :
- 3
- Factory Lead Time :
- 5 Weeks
- Frequency :
- 150MHz
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 50V
- Mounting Type :
- Surface Mount
- Turn Off Time-Max (toff) :
- 480ns
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 500mW
- Transition Frequency :
- 150MHz
- JESD-609 Code :
- e6
- Published :
- 2012
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Case Connection :
- COLLECTOR
- Terminal Form :
- Flat
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Max Breakdown Voltage :
- 50V
- Package / Case :
- TO-243AA
- Turn On Time-Max (ton) :
- 60ns
- Collector Base Voltage (VCBO) :
- 60V
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 6V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- -300mV
- Height :
- 1.5mm
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Number of Elements :
- 1
- Max Collector Current :
- 2A
- Element Configuration :
- Single
- Width :
- 2.5mm
- Max Power Dissipation :
- 500mW
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Length :
- 4.5mm
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 1A
- Datasheets
- 2SB1123S-TD-E
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1123S-TD-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
2SB1123S-TD-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 700mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SB1123S-TD-E Applications
There are a lot of ON Semiconductor
2SB1123S-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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