2SB1122T-TD-E
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- Mfr.Part #
- 2SB1122T-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 1A PCP
- Stock
- 69,889
- In Stock ：
- 69,889
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Width :
- 2.5mm
- Max Frequency :
- 150MHz
- Transistor Type :
- PNP
- Published :
- 2010
- Collector Emitter Breakdown Voltage :
- 50V
- Factory Lead Time :
- 2 Weeks
- Height :
- 1.5mm
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-243AA
- Element Configuration :
- Single
- Max Collector Current :
- 1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Length :
- 4.5mm
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- -60V
- Collector Emitter Saturation Voltage :
- -500mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 150MHz
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 500mV
- Max Power Dissipation :
- 500mW
- Pin Count :
- 3
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- -5V
- JESD-609 Code :
- e6
- Lead Free :
- Lead Free
- Datasheets
- 2SB1122T-TD-E
PNP 150°C TJ 100nA ICBO PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1122T-TD-E Overview
This device has a DC current gain of 100 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.A maximum collector current of 1A volts is possible.
2SB1122T-TD-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
2SB1122T-TD-E Applications
There are a lot of ON Semiconductor
2SB1122T-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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