2SB1122S-TD-E
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- Mfr.Part #
- 2SB1122S-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 1A PCP
- Stock
- 29,171
- In Stock ：
- 29,171
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 50V
- Width :
- 2.5mm
- Gain Bandwidth Product :
- 150MHz
- Pbfree Code :
- yes
- Power Dissipation :
- 500mW
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Published :
- 2010
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Frequency :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- -60V
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Polarity/Channel Type :
- PNP
- Length :
- 4.5mm
- Height :
- 1.5mm
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- hFE Min :
- 140
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Surface Mount :
- yes
- Factory Lead Time :
- 2 Weeks
- Max Power Dissipation :
- 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Collector Emitter Voltage (VCEO) :
- 50V
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- -180mV
- Collector Emitter Breakdown Voltage :
- 50V
- Package / Case :
- TO-243AA
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Pin Count :
- 3
- JESD-609 Code :
- e6
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2SB1122S-TD-E
PNP 150°C TJ 100nA ICBO 1 Elements PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1122S-TD-E Overview
In this device, the DC current gain is 100 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -180mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
2SB1122S-TD-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
2SB1122S-TD-E Applications
There are a lot of ON Semiconductor
2SB1122S-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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