2SB1121T-TD-E

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Mfr.Part #
2SB1121T-TD-E
Manufacturer
onsemi
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 25V 2A PCP
Stock
10,553
In Stock :
10,553

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 2V
Width :
2.5mm
Number of Pins :
3
Collector Base Voltage (VCBO) :
-30V
RoHS Status :
ROHS3 Compliant
Max Frequency :
150MHz
Lead Free :
Lead Free
Published :
2012
Pin Count :
3
Height :
1.5mm
Collector Emitter Saturation Voltage :
-350mV
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
2 Weeks
Transistor Type :
PNP
Packaging :
Tape and Reel (TR)
Vce Saturation (Max) @ Ib, Ic :
600mV @ 75mA, 1.5A
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Pbfree Code :
yes
Emitter Base Voltage (VEBO) :
-6V
Max Breakdown Voltage :
25V
Gain Bandwidth Product :
150MHz
Element Configuration :
Single
ECCN Code :
EAR99
Max Collector Current :
2A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
TO-243AA
Operating Temperature :
150°C TJ
Max Power Dissipation :
500mW
Reach Compliance Code :
not_compliant
JESD-609 Code :
e6
Mounting Type :
Surface Mount
Contact Plating :
Tin
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
25V
Length :
4.5mm
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Emitter Breakdown Voltage :
25V
Mount :
Surface Mount
Datasheets
2SB1121T-TD-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB1121T-TD-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-243AA, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, 2SB1121T-TD-E pinout, 2SB1121T-TD-E datasheet PDF, 2SB1121T-TD-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB1121T-TD-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB1121T-TD-E


PNP 150°C TJ 100nA ICBO TO-243AA Tape & Reel (TR) Surface Mount

2SB1121T-TD-E Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 2V.The collector emitter saturation voltage is -350mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 75mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.This device can take an input voltage of 25V volts before it breaks down.A maximum collector current of 2A volts can be achieved.

2SB1121T-TD-E Features


the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 600mV @ 75mA, 1.5A
the emitter base voltage is kept at -6V


2SB1121T-TD-E Applications


There are a lot of ON Semiconductor
2SB1121T-TD-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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