2SB1121T-TD-E
- Mfr.Part #
- 2SB1121T-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 25V 2A PCP
- Stock
- 10,553
- In Stock :
- 10,553
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Width :
- 2.5mm
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- -30V
- RoHS Status :
- ROHS3 Compliant
- Max Frequency :
- 150MHz
- Lead Free :
- Lead Free
- Published :
- 2012
- Pin Count :
- 3
- Height :
- 1.5mm
- Collector Emitter Saturation Voltage :
- -350mV
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 2 Weeks
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 75mA, 1.5A
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- -6V
- Max Breakdown Voltage :
- 25V
- Gain Bandwidth Product :
- 150MHz
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Max Collector Current :
- 2A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-243AA
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 500mW
- Reach Compliance Code :
- not_compliant
- JESD-609 Code :
- e6
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 25V
- Length :
- 4.5mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 25V
- Mount :
- Surface Mount
- Datasheets
- 2SB1121T-TD-E
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PNP 150°C TJ 100nA ICBO TO-243AA Tape & Reel (TR) Surface Mount
2SB1121T-TD-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 2V.The collector emitter saturation voltage is -350mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 75mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.This device can take an input voltage of 25V volts before it breaks down.A maximum collector current of 2A volts can be achieved.
2SB1121T-TD-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 600mV @ 75mA, 1.5A
the emitter base voltage is kept at -6V
2SB1121T-TD-E Applications
There are a lot of ON Semiconductor
2SB1121T-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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