2SB1121S-TD-E
- Mfr.Part #
- 2SB1121S-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 25V 2A PCP
- Stock
- 34,219
- In Stock :
- 34,219
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 4.5mm
- Width :
- 2.5mm
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 25V
- Mount :
- Surface Mount
- JESD-609 Code :
- e6
- Collector Emitter Saturation Voltage :
- -600mV
- Published :
- 2012
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Factory Lead Time :
- 2 Weeks
- Pin Count :
- 3
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 6V
- Packaging :
- Tape and Reel (TR)
- Frequency - Transition :
- 150MHz
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Max Collector Current :
- 2A
- Height :
- 1.5mm
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 500mW
- Package / Case :
- TO-243AA
- Reach Compliance Code :
- not_compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 30V
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Frequency :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 75mA, 1.5A
- Collector Emitter Breakdown Voltage :
- 25V
- Datasheets
- 2SB1121S-TD-E

PNP 150°C TJ 100nA ICBO TO-243AA Tape & Reel (TR) Surface Mount
2SB1121S-TD-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 2V DC current gain.As it features a collector emitter saturation voltage of -600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 2A volts.
2SB1121S-TD-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
2SB1121S-TD-E Applications
There are a lot of ON Semiconductor
2SB1121S-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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