2SAR552P5T100
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- Mfr.Part #
- 2SAR552P5T100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A MPT3
- Stock
- 3,279
- In Stock ：
- 3,279
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 1A
- Package / Case :
- TO-243AA
- Reach Compliance Code :
- not_compliant
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 500mW
- Collector Emitter Breakdown Voltage :
- 30V
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 400mV
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 500mW
- Factory Lead Time :
- 13 Weeks
- Frequency - Transition :
- 330MHz
- Max Collector Current :
- 3A
- Published :
- 2016
- Datasheets
- 2SAR552P5T100
PNP 150°C TJ 1μA ICBO TO-243AA Tape & Reel (TR) Surface Mount
2SAR552P5T100 Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 50mA, 1A means Ic has reached its maximum value(saturated).A breakdown input voltage of 30V volts can be used.A maximum collector current of 3A volts is possible.
2SAR552P5T100 Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
2SAR552P5T100 Applications
There are a lot of ROHM Semiconductor
2SAR552P5T100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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