2SAR533PT100
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- Mfr.Part #
- 2SAR533PT100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A MPT3
- Stock
- 1,163
- In Stock ：
- 1,163
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 300MHz
- Max Collector Current :
- 3A
- Published :
- 2013
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Frequency - Transition :
- 300MHz
- Transistor Type :
- PNP
- Base Part Number :
- 2SAR533
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- JESD-609 Code :
- e2
- Emitter Base Voltage (VEBO) :
- -6V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- TIN COPPER
- Max Frequency :
- 300MHz
- Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Pbfree Code :
- yes
- Power Dissipation :
- 2W
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 50V
- Terminal Position :
- Single
- Contact Plating :
- Copper, Tin
- Terminal Form :
- Flat
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 1A
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Continuous Collector Current :
- -3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 50mA 3V
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 400mV
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Package / Case :
- TO-243AA
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 180
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Max Power Dissipation :
- 2W
- Mounting Type :
- Surface Mount
- Datasheets
- 2SAR533PT100
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SAR533PT100 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 50mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 1A.Continuous collector voltages of -3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 3A volts.
2SAR533PT100 Features
the DC current gain for this device is 180 @ 50mA 3V
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at -6V
a transition frequency of 300MHz
2SAR533PT100 Applications
There are a lot of ROHM Semiconductor
2SAR533PT100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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