2SAR523EBTL
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- Mfr.Part #
- 2SAR523EBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A EMT3F
- Stock
- 14,700
- In Stock ：
- 14,700
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e1
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Published :
- 2015
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- ECCN Code :
- EAR99
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Emitter Base Voltage (VEBO) :
- -5V
- Power - Max :
- 150mW
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Max Power Dissipation :
- 150mW
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Collector Base Voltage (VCBO) :
- -50V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SC-89, SOT-490
- Mount :
- Surface Mount
- hFE Min :
- 120
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 400mV
- Terminal Form :
- Flat
- Collector Emitter Saturation Voltage :
- -150mV
- Terminal Position :
- Dual
- Transition Frequency :
- 300MHz
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 300MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Factory Lead Time :
- 13 Weeks
- Polarity/Channel Type :
- PNP
- Datasheets
- 2SAR523EBTL
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-89, SOT-490 Tape & Reel (TR) Surface Mount
2SAR523EBTL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -150mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 100mA volts.
2SAR523EBTL Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
2SAR523EBTL Applications
There are a lot of ROHM Semiconductor
2SAR523EBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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