2SAR523EBTL
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- Mfr.Part #
- 2SAR523EBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A EMT3F
- Stock
- 14,700
- In Stock ：
- 14,700
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 150mW
- Power - Max :
- 150mW
- Published :
- 2015
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- JESD-609 Code :
- e1
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Package / Case :
- SC-89, SOT-490
- Pin Count :
- 3
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- -150mV
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 400mV
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- hFE Min :
- 120
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 300MHz
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Form :
- Flat
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 50V
- Factory Lead Time :
- 13 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 300MHz
- Collector Base Voltage (VCBO) :
- -50V
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Max Collector Current :
- 100mA
- Mount :
- Surface Mount
- Datasheets
- 2SAR523EBTL
2SAR523EBTL Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-89, SOT-490 Tape & Reel (TR) Surface Mount
2SAR523EBTL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -150mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 100mA volts.
2SAR523EBTL Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
2SAR523EBTL Applications
There are a lot of ROHM Semiconductor
2SAR523EBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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