2SAR514PT100
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- Mfr.Part #
- 2SAR514PT100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.7A MPT3
- Stock
- 967
- In Stock ：
- 967
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Transition Frequency :
- 380MHz
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Published :
- 2013
- JESD-609 Code :
- e2
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- hFE Min :
- 120
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Terminal Finish :
- TIN COPPER
- Max Collector Current :
- 700mA
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 2W
- Emitter Base Voltage (VEBO) :
- -6V
- Collector Base Voltage (VCBO) :
- -80V
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 300mA
- Terminal Form :
- Flat
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Gain Bandwidth Product :
- 380MHz
- Current - Collector (Ic) (Max) :
- 700mA
- Collector Emitter Saturation Voltage :
- -200mV
- Collector Emitter Voltage (VCEO) :
- 400mV
- Package / Case :
- TO-243AA
- Datasheets
- 2SAR514PT100
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SAR514PT100 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 3V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 15mA, 300mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.In the part, the transition frequency is 380MHz.A maximum collector current of 700mA volts can be achieved.
2SAR514PT100 Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 15mA, 300mA
the emitter base voltage is kept at -6V
a transition frequency of 380MHz
2SAR514PT100 Applications
There are a lot of ROHM Semiconductor
2SAR514PT100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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