2SA2202-TD-E

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Mfr.Part #
2SA2202-TD-E
Manufacturer
onsemi
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 100V 2A PCP
Stock
1,175
In Stock :
1,175

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Case Connection :
COLLECTOR
Operating Temperature :
150°C TJ
Transition Frequency :
300MHz
Emitter Base Voltage (VEBO) :
-7V
Current - Collector Cutoff (Max) :
1μA ICBO
Collector Emitter Voltage (VCEO) :
100V
Max Power Dissipation :
1.3W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Collector Emitter Saturation Voltage :
-120mV
Width :
2.5mm
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Package / Case :
TO-243AA
Published :
2006
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Terminal Form :
Flat
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 5V
Max Breakdown Voltage :
100V
Max Frequency :
1MHz
Gain Bandwidth Product :
300MHz
Transistor Type :
PNP
Length :
4.5mm
Vce Saturation (Max) @ Ib, Ic :
240mV @ 100mA, 1A
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tape and Reel (TR)
Number of Elements :
1
Polarity/Channel Type :
PNP
Reach Compliance Code :
not_compliant
Collector Base Voltage (VCBO) :
-100V
Number of Terminations :
3
Power - Max :
3.5W
Mounting Type :
Surface Mount
Height :
1.5mm
JESD-609 Code :
e6
Max Collector Current :
2A
Factory Lead Time :
9 Weeks
Lead Free :
Lead Free
Pin Count :
3
Pbfree Code :
yes
Element Configuration :
Single
Number of Pins :
3
Mount :
Surface Mount
Collector Emitter Breakdown Voltage :
100V
Datasheets
2SA2202-TD-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SA2202-TD-E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-243AA, Number of Terminations:3, Mounting Type:Surface Mount, Number of Pins:3, 2SA2202-TD-E pinout, 2SA2202-TD-E datasheet PDF, 2SA2202-TD-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SA2202-TD-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SA2202-TD-E


PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

2SA2202-TD-E Overview


In this device, the DC current gain is 200 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -120mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 240mV @ 100mA, 1A.Keeping the emitter base voltage at -7V allows for a high level of efficiency.300MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.

2SA2202-TD-E Features


the DC current gain for this device is 200 @ 100mA 5V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 240mV @ 100mA, 1A
the emitter base voltage is kept at -7V
a transition frequency of 300MHz


2SA2202-TD-E Applications


There are a lot of ON Semiconductor
2SA2202-TD-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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