2SA2195,LF
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- Mfr.Part #
- 2SA2195,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- 3-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS PNP 50V 1.7A UFM
- Stock
- 4,080
- In Stock ：
- 4,080
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 300mA 2V
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 33mA, 1A
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Package / Case :
- 3-SMD, Flat Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- RoHS Status :
- Non-RoHS Compliant
- Factory Lead Time :
- 12 Weeks
- Current - Collector (Ic) (Max) :
- 1.7A
- Power - Max :
- 500mW
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- 2SA2195,LF
PNP 150°C TJ 100nA ICBO 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount
2SA2195,LF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 300mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 33mA, 1A.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.
2SA2195,LF Features
the DC current gain for this device is 200 @ 300mA 2V
the vce saturation(Max) is 200mV @ 33mA, 1A
2SA2195,LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SA2195,LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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