2SA2154MFV-Y,L3F
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- Mfr.Part #
- 2SA2154MFV-Y,L3F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A VESM
- Stock
- 10
- In Stock ：
- 10
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current - Collector (Ic) (Max) :
- 150mA
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Frequency - Transition :
- 80MHz
- Packaging :
- Tape and Reel (TR)
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SOT-723
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Factory Lead Time :
- 12 Weeks
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Power - Max :
- 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 6V
- Datasheets
- 2SA2154MFV-Y,L3F
PNP 150°C TJ 100nA ICBO SOT-723 Tape & Reel (TR) Surface Mount
2SA2154MFV-Y,L3F Overview
In this device, the DC current gain is 120 @ 2mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.The device exhibits a collector-emitter breakdown at 50V.
2SA2154MFV-Y,L3F Features
the DC current gain for this device is 120 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
2SA2154MFV-Y,L3F Applications
There are a lot of Toshiba Semiconductor and Storage
2SA2154MFV-Y,L3F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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