2SA2060(TE12L,F)

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Mfr.Part #
2SA2060(TE12L,F)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 50V 2A PW-MINI
Stock
111,549
In Stock :
111,549

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
7V
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Power Dissipation :
1W
Collector Emitter Breakdown Voltage :
50V
Operating Temperature :
150°C TJ
Mounting Type :
Surface Mount
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
50V
Number of Elements :
1
Package / Case :
TO-243AA
Current - Collector Cutoff (Max) :
100nA ICBO
Published :
2009
Vce Saturation (Max) @ Ib, Ic :
200mV @ 33mA, 1A
Collector Base Voltage (VCBO) :
50V
Max Power Dissipation :
1W
Max Collector Current :
2A
Packaging :
Tape and Reel (TR)
Transistor Type :
PNP
Number of Pins :
4
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 300mA 2V
Datasheets
2SA2060(TE12L,F)
Introducing Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SA2060(TE12L,F) from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-243AA, Number of Pins:4, 2SA2060(TE12L,F) pinout, 2SA2060(TE12L,F) datasheet PDF, 2SA2060(TE12L,F) amp .Beyond Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SA2060(TE12L,F) ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 2SA2060(TE12L,F)


PNP 150°C TJ 100nA ICBO 1 Elements TO-243AA Tape & Reel (TR) Surface Mount

2SA2060(TE12L,F) Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 300mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 33mA, 1A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Collector current can be as low as 2A volts at its maximum.

2SA2060(TE12L,F) Features


the DC current gain for this device is 200 @ 300mA 2V
the vce saturation(Max) is 200mV @ 33mA, 1A
the emitter base voltage is kept at 7V


2SA2060(TE12L,F) Applications


There are a lot of Toshiba Semiconductor and Storage
2SA2060(TE12L,F) applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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