2SA2039-E
- Mfr.Part #
- 2SA2039-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 5A TP
- Stock
- 5,785
- In Stock :
- 5,785
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector (Ic) (Max) :
- 5A
- Operating Temperature :
- 150°C TJ
- Frequency :
- 360MHz
- Max Collector Current :
- 5A
- Collector Emitter Voltage (VCEO) :
- 50V
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e6
- Collector Base Voltage (VCBO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Surface Mount :
- No
- Packaging :
- Bulk
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Published :
- 2012
- Terminal Position :
- Single
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Vce Saturation (Max) @ Ib, Ic :
- 430mV @ 100mA, 2A
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 50V
- Power Dissipation :
- 800mW
- Transition Frequency :
- 360MHz
- hFE Min :
- 200
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 800mW
- ECCN Code :
- EAR99
- Base Part Number :
- 2SA2039
- Factory Lead Time :
- 4 Weeks
- Datasheets
- 2SA2039-E

PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SA2039-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 430mV @ 100mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 360MHz.During maximum operation, collector current can be as low as 5A volts.
2SA2039-E Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 430mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 360MHz
2SA2039-E Applications
There are a lot of ON Semiconductor
2SA2039-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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