2SA2029M3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

-500mV

Length :

1.25mm

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

50V

Published :

2009

Factory Lead Time :

2 Weeks

Frequency :

140MHz

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500pA ICBO

Package / Case :

SOT-723

Number of Elements :

1

Operating Temperature :

150°C TJ

Voltage - Rated DC :

-50V

Transistor Type :

PNP

Max Power Dissipation :

265mW

Surface Mount :

yes

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

60V

Power Dissipation :

265mW

Transition Frequency :

140MHz

Terminal Position :

Dual

Current Rating :

-100mA

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

550μm

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Collector Emitter Voltage (VCEO) :

50V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

ECCN Code :

EAR99

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

hFE Min :

120

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

PNP

Emitter Base Voltage (VEBO) :

6V

Halogen Free :

Halogen Free

Terminal Form :

Flat

Gain Bandwidth Product :

140MHz

Peak Reflow Temperature (Cel) :

260

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Max Collector Current :

100mA

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Width :

850μm

Contact Plating :

Tin

Lead Free :

Lead Free