2SA1962RTU
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- Mfr.Part #
- 2SA1962RTU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- 2SA1962 - POWER BIPOLAR TRANSIST
- Stock
- 14,149
- In Stock ：
- 14,149
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- hFE Min :
- 55
- Contact Plating :
- Tin
- Transition Frequency :
- 30MHz
- Mounting Type :
- Through Hole
- Max Collector Current :
- 17A
- Factory Lead Time :
- 2 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 30MHz
- Package / Case :
- TO-3P-3, SC-65-3
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Published :
- 2005
- Weight :
- 6.401g
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Breakdown Voltage :
- 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 55 @ 1A 5V
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 30MHz
- Number of Terminations :
- 3
- Power Dissipation :
- 130W
- Base Part Number :
- 2SA1962
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- -250V
- Packaging :
- Tube
- Mount :
- Through Hole
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 250V
- JESD-30 Code :
- R-PSFM-T3
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 130W
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Datasheets
- 2SA1962RTU
2SA1962RTU Documents
PNP -55°C~150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON PNP TO-3P-3, SC-65-3 Tube Through Hole
2SA1962RTU Overview
DC current gain in this device equals 55 @ 1A 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 800mA, 8A.An emitter's base voltage can be kept at -5V to gain high efficiency.As a result, the part has a transition frequency of 30MHz.In extreme cases, the collector current can be as low as 17A volts.
2SA1962RTU Features
the DC current gain for this device is 55 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
a transition frequency of 30MHz
2SA1962RTU Applications
There are a lot of ON Semiconductor
2SA1962RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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