2SA1955FVATPL3Z
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- Mfr.Part #
- 2SA1955FVATPL3Z
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS PNP 12V 0.4A CST3
- Stock
- 88,368
- In Stock ：
- 88,368
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
- Max Breakdown Voltage :
- 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 12V
- Collector Emitter Voltage (VCEO) :
- 250mV
- Element Configuration :
- Single
- hFE Min :
- 300
- Package / Case :
- SC-101, SOT-883
- Max Collector Current :
- 400mA
- Collector Emitter Saturation Voltage :
- -30mV
- Mount :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Supplier Device Package :
- CST3
- Published :
- 2005
- Max Power Dissipation :
- 100mW
- Mounting Type :
- Surface Mount
- Power - Max :
- 100mW
- Polarity :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Cut Tape (CT)
- Frequency - Transition :
- 130MHz
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 400mA
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 200mA
- Datasheets
- 2SA1955FVATPL3Z
PNP 150°C TJ 100nA ICBO SC-101, SOT-883 Cut Tape (CT) Surface Mount
2SA1955FVATPL3Z Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -30mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 200mA.Input voltage breakdown is available at 12V volts.Product comes in the supplier's device package CST3.There is a 12V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 400mA volts at Single BJT transistors maximum.
2SA1955FVATPL3Z Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -30mV
the vce saturation(Max) is 250mV @ 10mA, 200mA
the supplier device package of CST3
2SA1955FVATPL3Z Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1955FVATPL3Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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