2SA1952TLQ
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- Mfr.Part #
- 2SA1952TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 60V 5A CPT3
- Stock
- 281
- In Stock ：
- 281
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Copper, Tin
- Current Rating :
- -5A
- Published :
- 2000
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e2
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Collector Current :
- 5A
- Max Frequency :
- 80MHz
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Transition Frequency :
- 80MHz
- Time@Peak Reflow Temperature-Max (s) :
- 10
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Height :
- 2.3mm
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 80MHz
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 4A
- Max Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- -5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1A 2V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Base Part Number :
- 2SA1952
- Turn Off Time-Max (toff) :
- 1800ns
- Max Power Dissipation :
- 1W
- HTS Code :
- 8541.29.00.75
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -300mV
- Voltage - Rated DC :
- -60V
- Pin Count :
- 3
- Number of Terminations :
- 2
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Width :
- 5.5mm
- Factory Lead Time :
- 20 Weeks
- Collector Base Voltage (VCBO) :
- 100V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- hFE Min :
- 120
- Continuous Collector Current :
- -5A
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Length :
- 6.5mm
- Transistor Application :
- SWITCHING
- Datasheets
- 2SA1952TLQ
PNP 150°C TJ 10μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SA1952TLQ Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -5A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 80MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 5A volts.
2SA1952TLQ Features
the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 200mA, 4A
the emitter base voltage is kept at -5V
the current rating of this device is -5A
a transition frequency of 80MHz
2SA1952TLQ Applications
There are a lot of ROHM Semiconductor
2SA1952TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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