2SA1952TLQ
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- Mfr.Part #
- 2SA1952TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 60V 5A CPT3
- Stock
- 281
- In Stock ：
- 281
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 4A
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Max Frequency :
- 80MHz
- Element Configuration :
- Single
- Length :
- 6.5mm
- Emitter Base Voltage (VEBO) :
- -5V
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1W
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Voltage - Rated DC :
- -60V
- Transition Frequency :
- 80MHz
- Continuous Collector Current :
- -5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1A 2V
- Factory Lead Time :
- 20 Weeks
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Collector Base Voltage (VCBO) :
- 100V
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Height :
- 2.3mm
- Base Part Number :
- 2SA1952
- Gain Bandwidth Product :
- 80MHz
- hFE Min :
- 120
- JESD-30 Code :
- R-PSSO-G2
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Copper, Tin
- Pin Count :
- 3
- Published :
- 2000
- Current Rating :
- -5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- -300mV
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Max Collector Current :
- 5A
- JESD-609 Code :
- e2
- Width :
- 5.5mm
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Pins :
- 3
- HTS Code :
- 8541.29.00.75
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Turn Off Time-Max (toff) :
- 1800ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheets
- 2SA1952TLQ
2SA1952TLQ Documents
PNP 150°C TJ 10μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SA1952TLQ Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -5A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 80MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 5A volts.
2SA1952TLQ Features
the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 200mA, 4A
the emitter base voltage is kept at -5V
the current rating of this device is -5A
a transition frequency of 80MHz
2SA1952TLQ Applications
There are a lot of ROHM Semiconductor
2SA1952TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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