2SA1943OTU
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- Mfr.Part #
- 2SA1943OTU
- Manufacturer
- onsemi
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- TRANS PNP 250V 17A TO264-3
- Stock
- 2,047
- In Stock ：
- 2,047
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- 2SA1943
- Number of Elements :
- 1
- Weight :
- 6.756g
- Published :
- 2005
- Width :
- 5mm
- Power Dissipation :
- 150W
- Max Collector Current :
- 17A
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- -250V
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Breakdown Voltage :
- 250V
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- -50°C~150°C TJ
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 5V
- Transition Frequency :
- 30MHz
- Package / Case :
- TO-264-3, TO-264AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Height :
- 26mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Emitter Voltage (VCEO) :
- 250V
- Length :
- 20mm
- Number of Pins :
- 3
- Packaging :
- Tube
- Max Power Dissipation :
- 150W
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 30MHz
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 30MHz
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Saturation Voltage :
- -3V
- Radiation Hardening :
- No
- hFE Min :
- 55
- Lead Free :
- Lead Free
- Datasheets
- 2SA1943OTU
2SA1943OTU Documents
PNP -50°C~150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON PNP TO-264-3, TO-264AA Tube Through Hole
2SA1943OTU Overview
In this device, the DC current gain is 80 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -3V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 800mA, 8A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.30MHz is present in the transition frequency.Maximum collector currents can be below 17A volts.
2SA1943OTU Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of -3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
a transition frequency of 30MHz
2SA1943OTU Applications
There are a lot of ON Semiconductor
2SA1943OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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