2SA1943N(S1,E,S)
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- Mfr.Part #
- 2SA1943N(S1,E,S)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS PNP 230V 15A TO3P
- Stock
- 42
- In Stock ：
- 42
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Voltage - Collector Emitter Breakdown (Max) :
- 230V
- Gain Bandwidth Product :
- 30MHz
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Published :
- 2005
- Collector Emitter Breakdown Voltage :
- 230V
- Collector Base Voltage (VCBO) :
- -230V
- Continuous Collector Current :
- -15A
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Polarity :
- PNP
- Max Collector Current :
- 15A
- Factory Lead Time :
- 12 Weeks
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Power - Max :
- 150W
- Package / Case :
- TO-3P-3, SC-65-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 5V
- Weight :
- 6.961991g
- Emitter Base Voltage (VEBO) :
- -5V
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- -1.1V
- Max Power Dissipation :
- 150W
- Frequency - Transition :
- 30MHz
- Mount :
- Through Hole
- Min Operating Temperature :
- -55°C
- Current - Collector (Ic) (Max) :
- 15A
- Transistor Type :
- PNP
- hFE Min :
- 35
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 3V
- Supplier Device Package :
- TO-3P(N)
- Datasheets
- 2SA1943N(S1,E,S)
PNP 150°C TJ 5μA ICBO TO-3P-3, SC-65-3 Tube Through Hole
2SA1943N(S1,E,S) Overview
This device has a DC current gain of 80 @ 1A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1.1V.A VCE saturation (Max) of 3V @ 800mA, 8A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -15A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.Product package TO-3P(N) comes from the supplier.Collector Emitter Breakdown occurs at 230VV - Maximum voltage.A maximum collector current of 15A volts is possible.
2SA1943N(S1,E,S) Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of -1.1V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
the supplier device package of TO-3P(N)
2SA1943N(S1,E,S) Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1943N(S1,E,S) applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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