2SA1930(Q,M)
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- Mfr.Part #
- 2SA1930(Q,M)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 180V 2A TO220NIS
- Stock
- 16,832
- In Stock ：
- 16,832
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Max Collector Current :
- 2A
- Mounting Type :
- Through Hole
- Published :
- 2007
- Package / Case :
- TO-220-3 Full Pack
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 1A
- Gain Bandwidth Product :
- 200MHz
- Element Configuration :
- Single
- Power - Max :
- 2W
- Power Dissipation :
- 20W
- Packaging :
- Bulk
- Number of Elements :
- 1
- Frequency :
- 200MHz
- Factory Lead Time :
- 12 Weeks
- Contact Plating :
- Copper, Silver, Tin
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Mount :
- Through Hole
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 180V
- Max Power Dissipation :
- 2W
- Collector Emitter Breakdown Voltage :
- 180V
- Collector Emitter Voltage (VCEO) :
- 180V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 50
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- 2SA1930(Q,M)
PNP 150°C TJ 5μA ICBO 1 Elements TO-220-3 Full Pack Bulk Through Hole
2SA1930(Q,M) Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 2A volts.
2SA1930(Q,M) Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A
the emitter base voltage is kept at 5V
2SA1930(Q,M) Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1930(Q,M) applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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