2SA1837,HFEMBJF(J
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- Mfr.Part #
- 2SA1837,HFEMBJF(J
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 230V 1A TO220NIS
- Stock
- 23,976
- In Stock ：
- 23,976
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 230V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Power - Max :
- 2W
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 70MHz
- Current - Collector (Ic) (Max) :
- 1A
- Packaging :
- Bulk
- Supplier Device Package :
- TO-220NIS
- Package / Case :
- TO-220-3 Full Pack
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 50mA, 500mA
- Mounting Type :
- Through Hole
- Datasheets
- 2SA1837,HFEMBJF(J
PNP 150°C TJ 1μA ICBO TO-220-3 Full Pack Bulk Through Hole
2SA1837,HFEMBJF(J Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 50mA, 500mA.Supplier device package TO-220NIS comes with the product.The device exhibits a collector-emitter breakdown at 230V.
2SA1837,HFEMBJF(J Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the supplier device package of TO-220NIS
2SA1837,HFEMBJF(J Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1837,HFEMBJF(J applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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