2SA1797T100P
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- Mfr.Part #
- 2SA1797T100P
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A MPT3
- Stock
- 80,519
- In Stock ：
- 80,519
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 500mA 2V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 50V
- Case Connection :
- COLLECTOR
- Current Rating :
- -3A
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- -6V
- Max Collector Current :
- 3A
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 1A
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-243AA
- Transistor Type :
- PNP
- JESD-609 Code :
- e2
- hFE Min :
- 82
- VCEsat-Max :
- 0.35 V
- Power Dissipation :
- 2W
- Transition Frequency :
- 200MHz
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Pins :
- 4
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 200MHz
- JESD-30 Code :
- R-PSSO-F3
- Terminal Finish :
- TIN COPPER
- Collector Emitter Voltage (VCEO) :
- 50V
- Gain Bandwidth Product :
- 200MHz
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 50V
- Terminal Form :
- Flat
- Pin Count :
- 3
- Contact Plating :
- Copper, Tin
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Max Power Dissipation :
- 2W
- Collector Base Voltage (VCBO) :
- 50V
- Published :
- 2006
- Current - Collector (Ic) (Max) :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -50V
- Base Part Number :
- 2SA1797
- Datasheets
- 2SA1797T100P
2SA1797T100P Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA1797T100P Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 82 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 50mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 3A volts.
2SA1797T100P Features
the DC current gain for this device is 82 @ 500mA 2V
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -3A
a transition frequency of 200MHz
2SA1797T100P Applications
There are a lot of ROHM Semiconductor
2SA1797T100P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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