2SA1774T1G
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- Mfr.Part #
- 2SA1774T1G
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A SC75 SOT416
- Stock
- 5,764
- In Stock ：
- 5,764
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- SC-75, SOT-416
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 140MHz
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- 2SA1774
- JESD-609 Code :
- e3
- Power Dissipation :
- 150mW
- Terminal Form :
- Gull wing
- hFE Min :
- 120
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 150mW
- Published :
- 2006
- Surface Mount :
- yes
- Width :
- 900μm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Length :
- 1.65mm
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current Rating :
- -100mA
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 2 Weeks
- Gain Bandwidth Product :
- 140MHz
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 50V
- Collector Emitter Saturation Voltage :
- -500mV
- Height :
- 800μm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Contact Plating :
- Tin
- Frequency :
- 140MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Base Voltage (VCBO) :
- 60V
- Halogen Free :
- Halogen Free
- Datasheets
- 2SA1774T1G
2SA1774T1G Documents
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP SC-75, SOT-416 Tape & Reel (TR) Surface Mount
2SA1774T1G Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 140MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 100mA volts.
2SA1774T1G Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is -100mA
a transition frequency of 140MHz
2SA1774T1G Applications
There are a lot of ON Semiconductor
2SA1774T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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