2SA1774T1G
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- Mfr.Part #
- 2SA1774T1G
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A SC75 SOT416
- Stock
- 5,764
- In Stock ：
- 5,764
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Current Rating :
- -100mA
- Collector Emitter Voltage (VCEO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 900μm
- Emitter Base Voltage (VEBO) :
- 6V
- Length :
- 1.65mm
- Package / Case :
- SC-75, SOT-416
- Power Dissipation :
- 150mW
- Collector Base Voltage (VCBO) :
- 60V
- Gain Bandwidth Product :
- 140MHz
- Halogen Free :
- Halogen Free
- Number of Pins :
- 3
- Transition Frequency :
- 140MHz
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Contact Plating :
- Tin
- Frequency :
- 140MHz
- Operating Temperature :
- 150°C TJ
- Height :
- 800μm
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Voltage - Rated DC :
- -50V
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 50V
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Saturation Voltage :
- -500mV
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 150mW
- Base Part Number :
- 2SA1774
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 50V
- hFE Min :
- 120
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Published :
- 2006
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Datasheets
- 2SA1774T1G
2SA1774T1G Documents
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP SC-75, SOT-416 Tape & Reel (TR) Surface Mount
2SA1774T1G Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 140MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 100mA volts.
2SA1774T1G Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is -100mA
a transition frequency of 140MHz
2SA1774T1G Applications
There are a lot of ON Semiconductor
2SA1774T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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