2SA1709T-AN
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- Mfr.Part #
- 2SA1709T-AN
- Manufacturer
- onsemi
- Package / Case
- SC-71
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A 3NMP
- Stock
- 30,782
- In Stock ：
- 30,782
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 10V
- Current - Collector (Ic) (Max) :
- 2A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Power - Max :
- 1W
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Package / Case :
- SC-71
- RoHS Status :
- Non-RoHS Compliant
- Frequency - Transition :
- 120MHz
- Supplier Device Package :
- 3-NMP
- Datasheets
- 2SA1709T-AN
PNP 150°C TJ 100nA ICBO SC-71 Tape & Reel (TR) Through Hole
2SA1709T-AN Overview
In this device, the DC current gain is 200 @ 100mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 100mA, 1A.Product comes in the supplier's device package 3-NMP.There is a 100V maximal voltage in the device due to collector-emitter breakdown.
2SA1709T-AN Features
the DC current gain for this device is 200 @ 100mA 10V
the vce saturation(Max) is 600mV @ 100mA, 1A
the supplier device package of 3-NMP
2SA1709T-AN Applications
There are a lot of Rochester Electronics, LLC
2SA1709T-AN applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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