2SA1586-GR,LF
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- Mfr.Part #
- 2SA1586-GR,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A SC70
- Stock
- 12,942
- In Stock ：
- 12,942
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 50V
- Factory Lead Time :
- 12 Weeks
- Operating Temperature :
- 125°C TJ
- Published :
- 2015
- Element Configuration :
- Single
- Package / Case :
- SC-70, SOT-323
- Collector Emitter Saturation Voltage :
- 100mV
- Transistor Type :
- PNP
- Contact Plating :
- Silver, Tin
- Max Operating Temperature :
- 125°C
- Mounting Type :
- Surface Mount
- hFE Min :
- 70
- Max Power Dissipation :
- 100mW
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Breakdown Voltage :
- 50V
- Weight :
- 6.208546mg
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Min Operating Temperature :
- -55°C
- Emitter Base Voltage (VEBO) :
- 5V
- Supplier Device Package :
- USM
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity :
- PNP
- Collector Emitter Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Frequency - Transition :
- 80MHz
- Current - Collector (Ic) (Max) :
- 150mA
- Max Collector Current :
- 150mA
- RoHS Status :
- RoHS Compliant
- Gain Bandwidth Product :
- 80MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 100mW
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2SA1586-GR,LF
PNP 125°C TJ 100nA ICBO SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SA1586-GR,LF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 100mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 50V volts.USM is the supplier device package for this product.This device displays a 50V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 150mA volts.
2SA1586-GR,LF Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the supplier device package of USM
2SA1586-GR,LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1586-GR,LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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