2SA1552T-H

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Mfr.Part #
2SA1552T-H
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
2SA1552 - SMALL SIGNAL BIPOLAR T
Stock
32,714
In Stock :
32,714

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
160V
Published :
2012
Operating Temperature :
150°C TJ
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Pbfree Code :
yes
Factory Lead Time :
2 Weeks
Halogen Free :
Halogen Free
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Base Part Number :
2SA1552
Max Power Dissipation :
1W
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Collector Base Voltage (VCBO) :
180V
Polarity/Channel Type :
PNP
Current - Collector Cutoff (Max) :
1μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Emitter Base Voltage (VEBO) :
6V
Packaging :
Bulk
Power - Max :
1W
Transistor Type :
PNP
Configuration :
Single
Collector Emitter Voltage (VCEO) :
160V
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Frequency - Transition :
120MHz
hFE Min :
100
Pin Count :
3
Number of Pins :
3
Surface Mount :
No
JESD-609 Code :
e6
Lead Free :
Lead Free
ECCN Code :
EAR99
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Max Collector Current :
1.5A
Datasheets
2SA1552T-H
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SA1552T-H from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Base Part Number:2SA1552, Number of Pins:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, 2SA1552T-H pinout, 2SA1552T-H datasheet PDF, 2SA1552T-H amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SA1552T-H ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SA1552T-H


PNP 150°C TJ 1μA ICBO PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SA1552T-H Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Collector current can be as low as 1.5A volts at its maximum.

2SA1552T-H Features


the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 6V


2SA1552T-H Applications


There are a lot of ON Semiconductor
2SA1552T-H applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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