2SA1507S
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- Mfr.Part #
- 2SA1507S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 160V 1.5A TO126ML
- Stock
- 10,589
- In Stock ：
- 10,589
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Max Collector Current :
- 1.5A
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 160V
- Gain Bandwidth Product :
- 120MHz
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Emitter Saturation Voltage :
- -200mV
- Max Breakdown Voltage :
- 160V
- Max Power Dissipation :
- 1.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transition Frequency :
- 120MHz
- Operating Temperature :
- 150°C TJ
- Frequency :
- 120MHz
- Emitter Base Voltage (VEBO) :
- -6V
- Collector Base Voltage (VCBO) :
- 180V
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Published :
- 2010
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 1.5W
- Packaging :
- Bulk
- Case Connection :
- Isolated
- Collector Emitter Breakdown Voltage :
- 160V
- Package / Case :
- TO-225AA, TO-126-3
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- hFE Min :
- 140
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Mounting Type :
- Through Hole
- Datasheets
- 2SA1507S
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
2SA1507S Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Input voltage breakdown is available at 160V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
2SA1507S Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 120MHz
2SA1507S Applications
There are a lot of ON Semiconductor
2SA1507S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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