2SA1507S
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- Mfr.Part #
- 2SA1507S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 160V 1.5A TO126ML
- Stock
- 10,589
- In Stock ：
- 10,589
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 160V
- Collector Base Voltage (VCBO) :
- 180V
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Case Connection :
- Isolated
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- hFE Min :
- 140
- Transition Frequency :
- 120MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Frequency :
- 120MHz
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -6V
- Max Power Dissipation :
- 1.5W
- Max Breakdown Voltage :
- 160V
- Gain Bandwidth Product :
- 120MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Power Dissipation :
- 1.5W
- Pin Count :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 160V
- Max Collector Current :
- 1.5A
- Published :
- 2010
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Emitter Saturation Voltage :
- -200mV
- Packaging :
- Bulk
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SA1507S
2SA1507S Documents
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
2SA1507S Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Input voltage breakdown is available at 160V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
2SA1507S Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 120MHz
2SA1507S Applications
There are a lot of ON Semiconductor
2SA1507S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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