2SA1419S-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

4.5mm

Base Part Number :

2SA1419

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

160V

JESD-609 Code :

e6

Current - Collector Cutoff (Max) :

1μA ICBO

Frequency :

120MHz

Terminal Form :

Flat

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

180V

Emitter Base Voltage (VEBO) :

6V

Pin Count :

3

Contact Plating :

Tin

Reach Compliance Code :

not_compliant

Number of Elements :

1

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Max Collector Current :

1.5A

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 5V

Transition Frequency :

120MHz

Collector Emitter Voltage (VCEO) :

160V

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Width :

2.5mm

Gain Bandwidth Product :

120MHz

Number of Terminations :

3

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

-200mV

Power Dissipation :

500mW

Polarity/Channel Type :

PNP

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Case Connection :

COLLECTOR

Package / Case :

TO-243AA

Max Power Dissipation :

500mW

Max Breakdown Voltage :

160V

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Height :

1.5mm

Factory Lead Time :

2 Weeks

Published :

2012

Transistor Type :

PNP