2SA1419S-TD-E
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- Mfr.Part #
- 2SA1419S-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 160V 1.5A PCP
- Stock
- 6,363
- In Stock ：
- 6,363
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 180V
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 120MHz
- Base Part Number :
- 2SA1419
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Length :
- 4.5mm
- Power Dissipation :
- 500mW
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 120MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 2 Weeks
- Max Collector Current :
- 1.5A
- Collector Emitter Breakdown Voltage :
- 160V
- Max Power Dissipation :
- 500mW
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Collector Emitter Saturation Voltage :
- -200mV
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Published :
- 2012
- Case Connection :
- COLLECTOR
- Height :
- 1.5mm
- Number of Elements :
- 1
- Terminal Form :
- Flat
- Number of Terminations :
- 3
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 120MHz
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 6V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Width :
- 2.5mm
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 160V
- Collector Emitter Voltage (VCEO) :
- 160V
- Number of Pins :
- 3
- Package / Case :
- TO-243AA
- JESD-609 Code :
- e6
- Datasheets
- 2SA1419S-TD-E
2SA1419S-TD-E Documents
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA1419S-TD-E Overview
This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -200mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 120MHz.A breakdown input voltage of 160V volts can be used.A maximum collector current of 1.5A volts is possible.
2SA1419S-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SA1419S-TD-E Applications
There are a lot of ON Semiconductor
2SA1419S-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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