2SA1418S-TD-E

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Mfr.Part #
2SA1418S-TD-E
Manufacturer
onsemi
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 160V 0.7A PCP
Stock
1,610
In Stock :
1,610

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Current - Collector Cutoff (Max) :
100nA ICBO
Number of Pins :
3
Emitter Base Voltage (VEBO) :
6V
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
hFE Min :
100
Factory Lead Time :
4 Weeks
Published :
2005
JESD-609 Code :
e6
Operating Temperature :
150°C TJ
Collector Emitter Breakdown Voltage :
160V
Max Collector Current :
700mA
Packaging :
Tape and Reel (TR)
Max Breakdown Voltage :
160V
Collector Emitter Saturation Voltage :
120mV
RoHS Status :
ROHS3 Compliant
Power - Max :
500mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 5V
Pbfree Code :
yes
Pin Count :
3
Reach Compliance Code :
not_compliant
Collector Emitter Voltage (VCEO) :
400mV
Max Power Dissipation :
500mW
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
400mV @ 25mA, 250mA
Element Configuration :
Single
Lead Free :
Lead Free
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Transistor Type :
PNP
Gain Bandwidth Product :
120MHz
Package / Case :
TO-243AA
Collector Base Voltage (VCBO) :
180V
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SA1418S-TD-E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:150°C TJ, Package / Case:TO-243AA, 2SA1418S-TD-E pinout, 2SA1418S-TD-E datasheet PDF, 2SA1418S-TD-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SA1418S-TD-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SA1418S-TD-E


PNP 150°C TJ 100nA ICBO TO-243AA Tape & Reel (TR) Surface Mount

2SA1418S-TD-E Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 5V.With a collector emitter saturation voltage of 120mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 25mA, 250mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.There is a breakdown input voltage of 160V volts that it can take.Collector current can be as low as 700mA volts at its maximum.

2SA1418S-TD-E Features


the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 400mV @ 25mA, 250mA
the emitter base voltage is kept at 6V


2SA1418S-TD-E Applications


There are a lot of ON Semiconductor
2SA1418S-TD-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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