2SA1381ESTU

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Mfr.Part #
2SA1381ESTU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 300V 0.1A TO126-3
Stock
8,025
In Stock :
8,025

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 10mA 10V
Base Part Number :
2SA1381
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Frequency - Transition :
150MHz
Mounting Type :
Through Hole
Current - Collector (Ic) (Max) :
100mA
Surface Mount :
No
Power - Max :
7W
Reach Compliance Code :
Compliant
Polarity/Channel Type :
PNP
Configuration :
Single
Terminal Position :
Single
Vce Saturation (Max) @ Ib, Ic :
600mV @ 2mA, 20mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSFM-T3
Voltage - Collector Emitter Breakdown (Max) :
300V
Transistor Application :
AMPLIFIER
Transistor Element Material :
SILICON
Transition Frequency :
150MHz
Packaging :
Tube
Transistor Type :
PNP
Current - Collector Cutoff (Max) :
100nA ICBO
Number of Elements :
1
Datasheets
2SA1381ESTU
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SA1381ESTU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Base Part Number:2SA1381, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, 2SA1381ESTU pinout, 2SA1381ESTU datasheet PDF, 2SA1381ESTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SA1381ESTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SA1381ESTU


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole

2SA1381ESTU Overview


In this device, the DC current gain is 100 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 2mA, 20mA.150MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 300V.

2SA1381ESTU Features


the DC current gain for this device is 100 @ 10mA 10V
the vce saturation(Max) is 600mV @ 2mA, 20mA
a transition frequency of 150MHz


2SA1381ESTU Applications


There are a lot of ON Semiconductor
2SA1381ESTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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