2SA1362-GR,LF
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- Mfr.Part #
- 2SA1362-GR,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 15V 0.8A SMINI
- Stock
- 7,321
- In Stock ：
- 7,321
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 120MHz
- Factory Lead Time :
- 12 Weeks
- Power - Max :
- 200mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- Non-RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 8mA, 400mA
- Voltage - Collector Emitter Breakdown (Max) :
- 15V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 1V
- Current - Collector (Ic) (Max) :
- 800mA
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Datasheets
- 2SA1362-GR,LF
PNP 150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA1362-GR,LF Overview
DC current gain in this device equals 200 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 8mA, 400mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2SA1362-GR,LF Features
the DC current gain for this device is 200 @ 100mA 1V
the vce saturation(Max) is 200mV @ 8mA, 400mA
2SA1362-GR,LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1362-GR,LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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