2SA1182-Y,LF
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- Mfr.Part #
- 2SA1182-Y,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.5A SMINI
- Stock
- 36,243
- In Stock ：
- 36,243
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 250mV
- Operating Temperature :
- 125°C TJ
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Max Breakdown Voltage :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 12 Weeks
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Max Power Dissipation :
- 150mW
- Gain Bandwidth Product :
- 200MHz
- Transistor Type :
- PNP
- Power - Max :
- 150mW
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Base Voltage (VCBO) :
- -35V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage :
- 30V
- Continuous Collector Current :
- -500mA
- Max Collector Current :
- 500mA
- RoHS Status :
- RoHS Compliant
- Published :
- 2013
- Collector Emitter Saturation Voltage :
- -250mV
- hFE Min :
- 25
- Datasheets
- 2SA1182-Y,LF
PNP 125°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA1182-Y,LF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 100mA 1V.With a collector emitter saturation voltage of -250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -500mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
2SA1182-Y,LF Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
2SA1182-Y,LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1182-Y,LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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