2SA1182-GR,LF
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- Mfr.Part #
- 2SA1182-GR,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.5A SMINI
- Stock
- 5,669
- In Stock ：
- 5,669
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 500mA
- Frequency - Transition :
- 200MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 1V
- Mounting Type :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Operating Temperature :
- 125°C TJ
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 150mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Transistor Type :
- PNP
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- 2SA1182-GR,LF
PNP 125°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA1182-GR,LF Overview
This device has a DC current gain of 200 @ 100mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 30V maximal voltage is present.
2SA1182-GR,LF Features
the DC current gain for this device is 200 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
2SA1182-GR,LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1182-GR,LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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