2SA1179N6-TB-E
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- Mfr.Part #
- 2SA1179N6-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A 3CP
- Stock
- 19,746
- In Stock ：
- 19,746
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 180MHz
- Transistor Type :
- PNP
- Power - Max :
- 200mW
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 135 @ 1mA 6V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Supplier Device Package :
- 3-CP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current - Collector (Ic) (Max) :
- 150mA
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Datasheets
- 2SA1179N6-TB-E
PNP 150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA1179N6-TB-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 135 @ 1mA 6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.This product comes in a 3-CP device package from the supplier.Device displays Collector Emitter Breakdown (50V maximal voltage).
2SA1179N6-TB-E Features
the DC current gain for this device is 135 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the supplier device package of 3-CP
2SA1179N6-TB-E Applications
There are a lot of Rochester Electronics, LLC
2SA1179N6-TB-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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