2SA1179N6-CPA-TB-E
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- Mfr.Part #
- 2SA1179N6-CPA-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A
- Stock
- 37,008
- In Stock ：
- 37,008
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Frequency - Transition :
- 180MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 200mW
- Current - Collector (Ic) (Max) :
- 150mA
- Datasheets
- 2SA1179N6-CPA-TB-E
PNP 150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA1179N6-CPA-TB-E Overview
In this device, the DC current gain is 200 @ 1mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.The device exhibits a collector-emitter breakdown at 50V.
2SA1179N6-CPA-TB-E Features
the DC current gain for this device is 200 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
2SA1179N6-CPA-TB-E Applications
There are a lot of Rochester Electronics, LLC
2SA1179N6-CPA-TB-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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