2SA1163-GR,LF
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- Mfr.Part #
- 2SA1163-GR,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.1A SMINI
- Stock
- 161,561
- In Stock ：
- 161,561
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Power - Max :
- 150mW
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 120V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Published :
- 2014
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Collector Emitter Breakdown Voltage :
- 120V
- Factory Lead Time :
- 12 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 150mW
- Max Breakdown Voltage :
- 120V
- Operating Temperature :
- 125°C TJ
- Frequency - Transition :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Reach Compliance Code :
- Unknown
- Collector Emitter Voltage (VCEO) :
- 300mV
- Datasheets
- 2SA1163-GR,LF
PNP 125°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA1163-GR,LF Overview
DC current gain in this device equals 200 @ 2mA 6V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 1mA, 10mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Breakdown input voltage is 120V volts.In extreme cases, the collector current can be as low as 100mA volts.
2SA1163-GR,LF Features
the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
2SA1163-GR,LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1163-GR,LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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