2SA1162GT1
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- Mfr.Part #
- 2SA1162GT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A SC59
- Stock
- 19,196
- In Stock ：
- 19,196
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 150mA
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Power - Max :
- 200mW
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- RoHS Status :
- Non-RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Supplier Device Package :
- SC-59
- Frequency - Transition :
- 80MHz
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- 2SA1162GT1
PNP -55°C~150°C TJ 100nA TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA1162GT1 Overview
DC current gain in this device equals 200 @ 2mA 6V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.Product comes in SC-59 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2SA1162GT1 Features
the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the supplier device package of SC-59
2SA1162GT1 Applications
There are a lot of Rochester Electronics, LLC
2SA1162GT1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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