2SA1036KT146R
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- Mfr.Part #
- 2SA1036KT146R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.5A SMT3
- Stock
- 1,890
- In Stock ：
- 1,890
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 32V
- Transition Frequency :
- 200MHz
- Frequency :
- 200MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 200MHz
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Emitter Saturation Voltage :
- -600mV
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- VCEsat-Max :
- 0.4 V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 200mW
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 32V
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 32V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 500mA
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 120
- Collector Base Voltage (VCBO) :
- 40V
- Pin Count :
- 3
- Published :
- 2004
- Factory Lead Time :
- 13 Weeks
- Continuous Collector Current :
- -500mA
- Emitter Base Voltage (VEBO) :
- -5V
- Base Part Number :
- 2SA1036
- Radiation Hardening :
- No
- Max Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Current Rating :
- -500mA
- JESD-609 Code :
- e1
- Contact Plating :
- Copper, Silver, Tin
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -32V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Datasheets
- 2SA1036KT146R
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA1036KT146R Overview
In this device, the DC current gain is 120 @ 100mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 30mA, 300mA.Maintaining the continuous collector voltage at -500mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).200MHz is present in the transition frequency.An input voltage of 32V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
2SA1036KT146R Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz
2SA1036KT146R Applications
There are a lot of ROHM Semiconductor
2SA1036KT146R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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