2SA1036KT146R
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- Mfr.Part #
- 2SA1036KT146R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.5A SMT3
- Stock
- 1,890
- In Stock ：
- 1,890
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -600mV
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 200MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e1
- Max Breakdown Voltage :
- 32V
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 120
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- VCEsat-Max :
- 0.4 V
- Terminal Position :
- Dual
- Published :
- 2004
- Continuous Collector Current :
- -500mA
- Emitter Base Voltage (VEBO) :
- -5V
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 32V
- Voltage - Rated DC :
- -32V
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Max Power Dissipation :
- 200mW
- Max Collector Current :
- 500mA
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Transition Frequency :
- 200MHz
- Factory Lead Time :
- 13 Weeks
- Gain Bandwidth Product :
- 200MHz
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Breakdown Voltage :
- 32V
- Power Dissipation :
- 200mW
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 40V
- Base Part Number :
- 2SA1036
- Number of Elements :
- 1
- Contact Plating :
- Copper, Silver, Tin
- Current Rating :
- -500mA
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Datasheets
- 2SA1036KT146R
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA1036KT146R Overview
In this device, the DC current gain is 120 @ 100mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 30mA, 300mA.Maintaining the continuous collector voltage at -500mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).200MHz is present in the transition frequency.An input voltage of 32V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
2SA1036KT146R Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz
2SA1036KT146R Applications
There are a lot of ROHM Semiconductor
2SA1036KT146R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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