2SA1020-Y,F(M
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- Mfr.Part #
- 2SA1020-Y,F(M
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A TO92MOD
- Stock
- 17,835
- In Stock ：
- 17,835
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 2V
- Mounting Type :
- Through Hole
- Published :
- 2002
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 1A
- Power - Max :
- 900mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Frequency - Transition :
- 100MHz
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 2A
- Supplier Device Package :
- TO-92MOD
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Packaging :
- Bulk
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SA1020-Y,F(M
PNP 150°C TJ 1μA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SA1020-Y(F,M) Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 70 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 1A.TO-92MOD is the supplier device package for this product.This device displays a 50V maximum voltage - Collector Emitter Breakdown.
2SA1020-Y(F,M) Features
the DC current gain for this device is 70 @ 500mA 2V
the vce saturation(Max) is 500mV @ 50mA, 1A
the supplier device package of TO-92MOD
2SA1020-Y(F,M) Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1020-Y(F,M) applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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