2SA1020-Y,F(J
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- Mfr.Part #
- 2SA1020-Y,F(J
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A TO92MOD
- Stock
- 25,373
- In Stock ：
- 25,373
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 1A
- Power - Max :
- 900mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 2A
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 2V
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Frequency - Transition :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SA1020-Y,F(J
PNP 150°C TJ 1μA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SA1020-Y,F(J Overview
DC current gain in this device equals 70 @ 500mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 1A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2SA1020-Y,F(J Features
the DC current gain for this device is 70 @ 500mA 2V
the vce saturation(Max) is 500mV @ 50mA, 1A
2SA1020-Y,F(J Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1020-Y,F(J applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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