2SA1020-O,F(J
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- Mfr.Part #
- 2SA1020-O,F(J
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A TO92MOD
- Stock
- 43,887
- In Stock ：
- 43,887
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transistor Type :
- PNP
- Power - Max :
- 900mW
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Published :
- 2010
- Frequency - Transition :
- 100MHz
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Supplier Device Package :
- TO-92MOD
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 1A
- Datasheets
- 2SA1020-O,F(J
PNP 150°C TJ 1μA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SA1020-O,F(J Overview
In this device, the DC current gain is 70 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 1A.Supplier device package TO-92MOD comes with the product.The device exhibits a collector-emitter breakdown at 50V.
2SA1020-O,F(J Features
the DC current gain for this device is 70 @ 500mA 2V
the vce saturation(Max) is 500mV @ 50mA, 1A
the supplier device package of TO-92MOD
2SA1020-O,F(J Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1020-O,F(J applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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