2SA1015-O-AP
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- Mfr.Part #
- 2SA1015-O-AP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92
- Stock
- 23,277
- In Stock ：
- 23,277
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Frequency - Transition :
- 80MHz
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- RoHS Compliant
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Box (TB)
- Transition Frequency :
- 80MHz
- Number of Terminations :
- 3
- JESD-30 Code :
- O-PBCY-T3
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 2mA 6V
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -55°C~125°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 150mA
- Number of Elements :
- 1
- Power Dissipation-Max (Abs) :
- 0.4W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e3
- Configuration :
- Single
- Power - Max :
- 400mW
- Datasheets
- 2SA1015-O-AP
PNP -55°C~125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2SA1015-O-AP Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 2mA 6V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.A transition frequency of 80MHz is present in the part.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.
2SA1015-O-AP Features
the DC current gain for this device is 70 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
a transition frequency of 80MHz
2SA1015-O-AP Applications
There are a lot of Micro Commercial Co
2SA1015-O-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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