2PD2150,115

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Mfr.Part #
2PD2150,115
Manufacturer
NXP Semiconductors
Package / Case
TO-243AA
Datasheet
Download
Description
NEXPERIA 2PD2150 - POWER BIPOLAR
Stock
27,405
In Stock :
27,405

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
6V
Packaging :
Tape and Reel (TR)
Published :
2007
Gain Bandwidth Product :
220MHz
Base Part Number :
2PD2150
Number of Pins :
4
Contact Plating :
Tin
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Max Collector Current :
3A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
hFE Min :
180
JESD-609 Code :
e3
Factory Lead Time :
4 Weeks
Max Breakdown Voltage :
20V
Package / Case :
TO-243AA
Operating Temperature :
150°C TJ
Collector Emitter Breakdown Voltage :
20V
Max Power Dissipation :
2W
Transistor Type :
NPN
Mount :
Surface Mount
Lead Free :
Lead Free
Vce Saturation (Max) @ Ib, Ic :
500mV @ 100mA, 2A
Current - Collector Cutoff (Max) :
100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
180 @ 100mA 2V
Collector Base Voltage (VCBO) :
40V
Mounting Type :
Surface Mount
Collector Emitter Voltage (VCEO) :
20V
Power - Max :
2W
Pin Count :
3
Element Configuration :
Single
Datasheets
2PD2150,115
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors 2PD2150,115 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2PD2150, Number of Pins:4, Package / Case:TO-243AA, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, 2PD2150,115 pinout, 2PD2150,115 datasheet PDF, 2PD2150,115 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors 2PD2150,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors 2PD2150,115


NPN 150°C TJ 100nA ICBO TO-243AA Tape & Reel (TR) Surface Mount

2PD2150,115 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 100mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Single BJT transistor can be broken down at a voltage of 20V volts.When collector current reaches its maximum, it can reach 3A volts.

2PD2150,115 Features


the DC current gain for this device is 180 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V


2PD2150,115 Applications


There are a lot of Nexperia USA Inc.
2PD2150,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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