2N930

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Mfr.Part #
2N930
Manufacturer
Microchip Technology
Package / Case
TO-206AA, TO-18-3 Metal Can
Datasheet
Download
Description
TRANS NPN 45V 0.03A TO18
Stock
6,177
In Stock :
6,177

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Supplier Device Package :
TO-18 (TO-206AA)
Collector Emitter Breakdown Voltage :
45V
Emitter Base Voltage (VEBO) :
6V
RoHS Status :
Non-RoHS Compliant
Mount :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 10μA 5V
Mounting Type :
Through Hole
Transistor Type :
NPN
Power - Max :
300mW
Operating Temperature :
-55°C~200°C TJ
Current - Collector (Ic) (Max) :
30mA
Number of Elements :
1
Current - Collector Cutoff (Max) :
2nA
Power Dissipation :
300mW
Published :
2002
Min Operating Temperature :
-55°C
Factory Lead Time :
12 Weeks
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
1V @ 500μA, 10mA
Radiation Hardening :
No
Max Power Dissipation :
300mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-206AA, TO-18-3 Metal Can
Packaging :
Bulk
Max Operating Temperature :
200°C
Voltage - Collector Emitter Breakdown (Max) :
45V
Collector Base Voltage (VCBO) :
60V
Collector Emitter Voltage (VCEO) :
45V
Polarity :
NPN
Contact Plating :
Lead, Tin
Max Collector Current :
30mA
Lifecycle Status :
IN PRODUCTION (Last Updated: 2 weeks ago)
Datasheets
2N930
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N930 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~200°C TJ, Number of Pins:3, Package / Case:TO-206AA, TO-18-3 Metal Can, 2N930 pinout, 2N930 datasheet PDF, 2N930 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N930 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -55°C~200°C TJ 2nA 1 Elements TO-206AA, TO-18-3 Metal Can Bulk Through Hole

2N930 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10μA 5V.When VCE saturation is 1V @ 500μA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Supplier package TO-18 (TO-206AA) contains the product.The device has a 45V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 30mA volts can be achieved.

2N930 Features


the DC current gain for this device is 100 @ 10μA 5V
the vce saturation(Max) is 1V @ 500μA, 10mA
the emitter base voltage is kept at 6V
the supplier device package of TO-18 (TO-206AA)


2N930 Applications


There are a lot of Microsemi Corporation
2N930 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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